引用:

原帖由 bigpuma 于 2008-5-8 19:57 发表


那个是按位计算的的空间，实际大小应该除以8，才是以字节计算的容量大小。


另外，这个内存片子是用FBGA封装的，如果换掉，焊接必须过炉子，300多度的高温，板子上的其他接头等塑料件，恐怕过不了。对能否更换表示怀疑。
不过还是 ...

芯片焊接不成问题，芯片我以开始在找，估计明天由消息了，

强人呀.非常关注中.

不怕！
人多力量大！起來找芯片！

估计要100片以上才好搞啊

引用:

原帖由 yuyu0886 于 2008-5-9 18:02 发表

芯片焊接不成问题，芯片我以开始在找，估计明天由消息了，

找了个师傅问问,他说比较麻烦,而且风险还不小~~

在网上找到了蕊片的卖家,但他开口很厉害,要大量的买才出货~~看来想自己搞点试验是不行了~~

顶起来.........

能否加PCB版，改變針腳位置？

引用:

原帖由 neverknow 于 2008-5-10 02:19 发表
在网上找到了蕊片的卖家,但他开口很厉害,要大量的买才出货~~看来想自己搞点试验是不行了~~

想换的兄弟们集资啊

要多少才算大量呢？

引用:

原帖由 jlqingxin 于 2008-5-10 13:41 发表

想换的兄弟们集资啊

集资吗?行不通的~~那些商家都是做批发的,一次的量我估计得上百~~现在也只是猜测,如果一次买了上百个芯片,回来试验不能使用,那不仅是对上级的一个打击,也无法对集资的兄弟有一个交代啊~~

引用:

原帖由 yuyu0886 于 2008-5-9 18:02 发表

芯片焊接不成问题，芯片我以开始在找，估计明天由消息了，

有消息了吗??兄弟们都在着急等待啊~~

有消息了吗??兄弟们都在着急等待啊~~

Samsung mobile 1GB DRAM

Dennis Hissink : January 3th 2007 - 15:00 CET

Samsung mobile 1GB DRAM : Samsung announced that it has developed the industry's first one gigabit (Gb) Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology. The new chip, also known as low-power DDR (double data rate) or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products. The monolithic 1Gb Mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gb memory solution widely used today, as the electric current in the new chip drops a full 30 percent.

Samsung 1GB mobile DRAM
The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs. Also offering a more compact form factor, the new 1Gb Mobile DRAM chip is at least 20 percent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory, for which market demand is expected to grow in 2007.
1GB mobile DRAM - Samsung memory
One 1Gb mobile DRAM also can be combined with Flash memory in multi-chip packaging including package-on-package designs. Samsung plans to mass produce the new device beginning in the second quarter of 2007 at a time when demand for high-density 1Gb mobile DRAM is expected to be very high.
About Samsung Electronics
Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2005 parent company sales of US$56.7 billion and net income of US$7.5 billion. Employing approximately 128,000 people in over 120 offices in 57 countries, the company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is a leading producer of digital TVs, memory chips, mobile phones and TFT-LCDs.

1Gb mobile DRAM

Monday, August 13th 2007 - 16:50 CEST - Comments: 0
H ynix Semiconductor, Inc. announced it has developed the industry's smallest 1Gb mobile DRAM. Mobile DRAMs are widely used in wireless and handheld applications such as mobile phones, digital still and video cameras, PDAs, PMPs, and GPS Navigation systems. These products are now designed in smaller and smaller packages reducing the size of the battery. Hynix's Mobile DRAMs are designed to meet the memory requirements of feature-rich portable applications that demand high memory density, high throughput and very low power dissipation features in a small form factor package. The product is also the industry's first commercially available 1Gb mobile DRAM built on Hynix's 66 nm process technology.

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Smallest 1Gb mobile DRAM
It operates at a maximum clock speed of 200MHz resulting in a throughput of up to 1.6 Gbytes of data per second with a 32-bit I/O - the fastest in the industry. The product consumes very low power, under worst case conditions, extending battery life in a wide range of portable electronic devices. The 1Gb Mobile DRAM is one product in Hynix's family of 'One Chip Solutions' that combine SDRAM/DDR DRAM interfaces, and x16/x32 organizations on a single chip, allowing Hynix the flexibility of offering wire bonded options to meet the specific needs of the customer.

1 Gb mobile DRAM - Availability
Hynix plans to begin mass production from the first quarter of 2008. The product will be available as 'NAND flash Multi-Chip Package (NAND MCP)', which combines DRAM and NAND flash in a single package, or 'package-on-package (POP)'stack. It will also be offered as 'KGD (Known Good Die)' for System in Package (SIP) applications.

上网查了半天，发现128MB的mobile sdram还没有形成实际生产规模，可能业界目前广泛使用的mobile sdram芯片就是512Mb(64MB)的，不管是samsung还是hynix都是如此；尽管hynix是业界龙头，而且早在去年就声称研制出1GMb的mobile sdram，但目前在其网站上还是只能看见256Mb和512Mb两种类型。不过mobile ddr sdram的倒是有1Gb的，可惜用不了啊。

看了一下i350的PCB的LAYOUT，估计技嘉考虑到LAYOUT的难度和系统的可靠性选择了单个芯片SDRAM的形式，这就降低了系统的故障率，同时也降低了成本。谁让1G的sdram目前不够成熟呢，大家等等吧，过一段时间，等1G的需求量增大，各大sdram厂商的出货量也会增大，那时候我们就可以比较轻松的找到这块芯片了。

另外有一点不太明白了，请坛子里的大侠赐教：如果换的sdram不是一家的，那么内部寄存器参数可能会不太一样，这样就要修改系统boot代码的sdram初始化模块，请问这个怎么实现？

[ 本帖最后由 elecman 于 2008-5-11 12:06 编辑 ]

以上这幅图是hynix公司的新产品：采用多芯片封装工艺制成的系统存储芯片，可以将mobile sdram和NAND flash放在一个芯片上，目前可以集成128MB的moible sdram和512MB的NAND flash，这可以代替板子上的mobile sdram和msystem的mdoc芯片，看样子我们的ppc以后会更加轻薄和强大了，等吧

持续关注中~~~~~！！！

找了夏新厂的朋友，但是还没回话

真的是群策群力啊，内存芯片我不怎么熟，
想帮也帮不上什么忙。